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r 20 1 6 04i 1 / 1 6 n ??? n - channel mosfet j cs 4n 6 0 b order codes ? marking ? package halogen free ? packaging device weight jcs4n60v b - o - v - n - b jcs4n60v b ipak no tube 0.3 5 g(typ) jcs4n60r b - o - r - n - b jcs4n60r b dpak no tube 0.30 g(typ) jcs4n60r b - o - r - n - a jcs4n60r b dpak no reel 0.30 g(typ) jcs4n60 bb - o - b - n - b jcs4n60 bb to - 2 62 no tube 1 . 71 g(typ) jcs4n60 sb - o - s - n - b jcs4n60 s b to - 2 63 no tube 1 . 37 g(typ) jcs4n60c b - o - c - n - b jcs4n60c b to - 220c n o tube 2.15 g(typ) jcs4n60f b - o - f - n - b jcs4n60f b to - 220mf no tube 2.20 g(typ) jcs4n60f b - r - f - n - b jcs4n60f b to - 220mf yes tube 2.20 g(typ) jcs4n60f b - o - f 1 - n - b jcs4n60f b to - 220mf - k 1 no tube 1 .78 g(typ) jcs4n60f b - o - f 2 - n - b jcs4n60f b to - 220mf - k2 no tube 1.78 g(typ) ? package ? main characteristics i d 4.0 a v dss 6 00 v rdson vgs=10v 2.4 qg 13.3 nc ? l ??? l l led ? applications l high efficiency switch mode power supplies l electronic lamp ballasts based on half bridge l led power supplies ? l ? l c rss ( ? 9 pf) l ?? l ??? l ? dv/dt l rohs ? features l l ow gate charge l low c rss (typical 9 pf ) l fast switching l 100% avalanche tested l improved dv/dt capa bility l rohs product ? order message
r jcs 4n 60 b 20 1 6 04i 2 / 1 8 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs4n60 v b /r b jcs4n60 c b/sb/ b b jcs4n60 f b ( to - 2 2 0mf ) jcs4n60 f b ( to - 22 0mf - k1/ k 2 ) uni t ? ??? drain - source voltage v dss 600 v 4.0 4.0 * a ? drain current - continuous i d t=25 t=100 2. 5 2.5 * a ? ? 1 drain current - pulse note 1 i dm 1 6 16 * a ?? ? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 17.5 mj ? ? 1 avalanche current note 1 i ar 4.0 a ?? ? 1 repetitive avalanche current note 1 e ar 10.0 mj ??? ? 3 peak diode recover y dv/dt note 3 dv/dt 5.5 v/n s 51 100 43 36 w ? power dissipation p d t c =25 - derate above 25 0.39 0. 80 0. 3 4 0.29 w/ ??? operating and storage temperature range t j t stg - 55 +150 ?? maximum lead temperature for soldering purposes t l 300
r jcs 4n 60 b 20 1 6 04i 3 / 1 8 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off ? characteristics ? ?? dr ain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 65 - v/ v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a ???? zero gate voltage drain current i dss v ds = 48 0v, t c = 125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4.0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 2 a - 1.7 2. 4 ? forward transconductance g fs v ds = 40v , i d = 2 a note 4 - 4.7 - s ? dynamic characteristics input capacitance c iss - 490 642 pf output capacitance c oss - 95 124 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 9 12 pf
r jcs 4n 60 b 20 1 6 04i 4 / 1 8 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) - 16 42 ns ? turn - on rise time t r - 49 111 ns ?? turn - off delay time t d (off) - 46 1 02 ns ?? turn - off fall time t f v dd = 30 0v,i d = 4.0 a,r g =25? note 4 5 - 37 84 ns ? total gate charge q g - 13.3 19 nc ? ? gate - source charge q gs - 3 .6 - nc ? ? gate - drain charge q gd v ds = 48 0v , i d = 4.0 a v gs =10v note 4 5 - 4.9 - nc ? ???? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 4.0 a maximum pulsed drain - source diode forward current i sm - - 1 6 a ? drain - source diode forward voltage v sd v gs =0v, i s = 4.0 a - - 1. 4 v ?? reverse recovery time t rr - 33 0 - ns ? reverse recovery charge q rr v gs =0v, i s = 4.0 a di f /dt=100a/ s (note 4) - 2.6 7 - c t hermal characteristic max ? parameter symbol jcs4n60 v b /rb jcs4n60 c b /sb/bb jcs4n6 0f b ( to - 220mf ) jcs4n60f b ( to - 22 0mf - k 1/k 2 ) unit ??? thermal resistance, junction to case r th(j - c) 2.5 0 1.2 5 2 .92 3.49 /w ? thermal resistance, junction to ambient r th(j - a) 83 62.5 3 7 . 6 42.09 /w ? 1 ? 2 l = 0.5 mh, i as = 8 .0 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 0.5 mh, i as = 8 .0 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature
r jcs 4n 60 b 20 1 6 04i 5 / 1 8 elec trical characteristics (curves) on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 0 1 2 3 4 5 6 1.2 1.4 1.6 1.8 2.0 2.2 2.4 note t j =25 v gs =10v r ds (on ) [ ] i d [a] v gs =20v 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v] 10 -1 10 0 10 1 0.0 2.0x10 2 4.0x10 2 6.0x10 2 8.0x10 2 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds drain-source voltage [v]
r jcs 4n 60 b 20 1 6 04i 6 / 1 8 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v g s =0v 2. i d =250a t j [ ] bv dss (normalized) breakdown voltage variation vs. temperature on - r esistance variation vs. temperature maximum safe operating area for jcs 4n60 f b ( to - 220mf ) maximum drain current vs. case temperature maximum safe o perating area for jcs4n60 ( v/r /c /s/b ) b -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =2.0a r ds (on ) (normalized) t j [ ] maximum safe operating area for jcs 4n60 f b ( to - 220mf - k1/k2 )
r jcs 4n 60 b 20 1 6 04i 7 / 1 8 electrical characteristics (curves) transient thermal response curve for jcs 4 n60c b /sb/bb transient thermal response curve for jcs4n60 ( v/r ) b transient thermal response curve for jcs 4 n60 f b ( to - 220mf )
r jcs 4n 60 b 20 1 6 04i 8 / 1 8 transient thermal response curve for jcs 4 n60 f b ( to - 220mf - k1/k2 )
r jcs 4n 60 b 20 1 6 04i 9 / 1 8 ? package mechan ical data ipak u nit mm
r jcs 4n 60 b 20 1 6 04i 10 / 1 8 ? package mechanical data ipak s2 u nit mm
r jcs 4n 60 b 20 1 6 04i 11 / 1 8 ? package mechanical data dpak reel u nit mm
r jcs 4n 60 b 20 1 6 04i 12 / 1 8 ? package mechanical data to - 2 6 2 u nit mm
r jcs 4n 60 b 20 1 6 04i 13 / 1 8 ? package mechanical data to - 2 63 u nit mm
r jcs 4n 60 b 20 1 6 04i 14 / 1 8 ? package mechanical data to - 2 20 c u nit mm
r jcs 4n 60 b 20 1 6 04i 15 / 1 8 ? package mechanical data to - 2 20 mf u nit mm
r jcs 4n 60 b 20 1 6 04i 16 / 1 8 ? package mechanical data to - 220mf - k1 u nit mm
r jcs 4n 60 b 20 1 6 04i 17 / 1 8 ? package mechanical data to - 220mf - k2 u nit mm
r jcs 4n 60 b 20 1 6 04i 18 / 1 8 ? 1. ???????? ? ??? ?? ???? 2. ??? ? ?? 3. ????? ?? ??? 4. ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please chec k with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when cir cuit designing. 4. jilin sino - microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ?? ?? 99 ? 132013 ? 86 - 432 - 64678411 86 - 432 - 64665812 ? www.hwdz.c om.cn ? ? ?? 99 ? 132013 86 - 432 - 64675588 64675688 64678411 : 86 - 432 - 64671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 13201 3 tel 86 - 432 - 64678411 fax 86 - 432 - 64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 64675588 64675688 64 678411 fax: 86 - 432 - 64671533

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